Semiconductor >> Nano-Master, Inc. USA

Atomic Layer Deposition (ALD)

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Detailed Specs

Atomic layer deposition (ALD) provides a unique method for depositing defect free ultrathin films on surfaces. This technique uses sequential surface reactions to coat substrates with high conformality and precise thickness control at the atomic scale.The ALD(Atomic Layer Deposition) process consists of sequential introduction of desired precursor vapors with hydroxyl groups, each of which forms about one atomic layer per pulse. Key challenges relate to fast removal of gas in the chamber to enhance throughput as well as activation of Nitrogen to form stoichiometric compounds of nitrides. Nano-Master, with extensive expertise in plasma processing and vacuum technology is able to provide unique solutions on its Plasma Assisted ALD(Atomic Layer Deposition) product line.