Semiconductor >> Nano-Master, Inc. USA

Deep Reactive Ion Etching System(DRIE)

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Detailed Specs

NANO-MASTER DRIE systems incorporate a planar ICP source for high density plasma generation. Our systems have the ability to be used both with Cryo etch and Bosch processes that can create deep penetration, steep-sided holes and trenches in wafers with high aspect ratios. Some of the unique features are:

– NM-ICP downstream high density shower-head plasma source
– Compatible with Bosch and Cryo etch processees
– 13″” Aluminum hard anodized chamber
– Reduced chamber volume ensuring high gas conductance and short step times
– Up to 200mm substrates
– Mechanical chuck with He backside cooling
– 1kW RF power supply with Auto Tuner for ICP source
– 600W RF power supply with Auto Tuner for substrate bias
– RIE mode for low etch rate applications
– PC based fully automatic recipe or manually driven control system
– State of the art user interface
– EMO protection and safety interlock