Plasma cleaning and Ashing System

Aurion’s Plasma Cleaning and Ashing systems use either microwave or RF excitation. Microwave plasma is ideal for most resist removal in modern device fabrication, since it produces a very high concentration of chemically active species along with low ion bombardment energy, guaranteeing fast ash rate and a damage-free plasma cleaning. Microwave plasma systems are suitable for various substrate technologies like Si, III/V-compounds, quartz, ceramic, lithium niobate, copper interconnect devices etc. The inherently isotropic plasma etch characteristic is an advantage for sacrificial layer etch and SU-8 removal in MEMS fabrication.