Semiconductor & Solar >> ULTECH Co. Ltd, South Korea

Plasma Ion Immersion Implantation

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Detailed Specs

ULTECH’s Plasma Ion Immersion System is used for surface modification by extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. General Applications of Ultech’s Plasma Ion Immersion Implantation system:

– Ultra-Shallow Junction Doping for sub-100 nm CMOS
– Conformal doping of non-planar CMOS and other electronic devices
– Poly-Si Gate & Trench Sidewall Doping
– Gate Dielectric Modification
– Layer transfer technology for “SOI”, “Si-on Anything” and other electron materials
(SiC, GaAs, InP, GaN, etc)
– SOI by SPIMOX (Separation by Plasma Ion Immersion Implantation of Oxygen)