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SPTS Technologies, a KLA company, designs, manufactures, sells, and supports Etch, PVD, CVD and MVD capital equipment, providing advanced wafer processing technologies and solutions for the semiconductor and microelectronics industry. End-market applications include micro-electromechanical systems (MEMS), advanced packaging, LED, high speed RF device IC’s and power semiconductors.
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Plasma etching involves RF-excitation of a selected gas mixture to create a plasma with the right reactive species to etch any un-masked areas on the wafer surface. The reactions form volatile by-products which are removed by vacuum pumping. SPTS offers advanced etch technologies for a wide range of applications:
Si DRIE – Omega® Rapier / DSi / DSi-v
Patented dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniformed distribution of radicals, High etch rate. Excellent uniformity. Controls tilting of deep features across the wafer. Inherent multi-mode flexibility also allows complementary oxide etching within the same hardware. Delivering unparalleled process capability with world-class productivity & cost of ownership benefits, SPTS’s DRIE process modules are used in a wide variety of applications across multiple end markets.
ICP Etch Omega® ICP
SPTS ICP Process module is highly flexible and etches a wide range of materials including oxides, nitrides, polymers, low aspect ratio Si and metals. The Omega® ICP process module uses a patented high density plasma source incorporating a radial coil design. The ICP module is the industry leader for compound semiconductor applications.
SPTS Dielectric Etch – Omega® Synapse™
Omega® Synapse™ etch process module uses a high density plasma source and is designed to etch strongly bonded materials.
High MTBC – The process chamber can be heated to ~130ºC to reduce the amount of by-product deposition and improve MTBC. The chamber is also surrounded by permanent magnets which result in a higher plasma density than conventional ICPs (by a factor of ~10x).
High Etch Rate – Higher plasma density means higher etch rate of strongly bonded materials and the capability of running at reduced pressure. The latter extends mean free paths and leads to better directionality and less by-product ‘fencing’. Versalis-compatible – Can be fully integrated with different SPTS etch and deposition modules on a Versalis cluster platform